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dc.contributor.authorKimoto, Ten
dc.contributor.authorFujimiza, Ken
dc.contributor.authorShiomi, Hen
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T03:15:10Z-
dc.date.available2007-03-28T03:15:10Z-
dc.date.issued2003-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/2433/4857-
dc.language.isoeng-
dc.publisherINST PURE APPLIED PHYSICSen
dc.subjectsilicon carbideen
dc.subjectSchottky barrier diodeen
dc.subjectpower deviceen
dc.subjectdislocationen
dc.subjectwide band-gap semiconductoren
dc.titleHigh-voltage 4H-SiC Schottky barrier diodes fabricated on (03(3)over-bar8) with closed micropipesen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen
dc.identifier.volume42-
dc.identifier.issue1A-B-
dc.identifier.spageL13-
dc.identifier.epageL16-
dc.relation.doi10.1143/JJAP.42.L13-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
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