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dc.contributor.authorKimoto, Ten
dc.contributor.authorTamura, Sen
dc.contributor.authorChen, Yen
dc.contributor.authorFujihira, Ken
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T03:32:16Z-
dc.date.available2007-03-28T03:32:16Z-
dc.date.issued2001-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/2433/4867-
dc.language.isoeng-
dc.publisherINST PURE APPLIED PHYSICSen
dc.subjectsilicon carbideen
dc.subjectchemical vapor depositionen
dc.subjectsurface morphologyen
dc.subjectdeep levelen
dc.subjectuniformityen
dc.titleFast epitaxial growth of 4H-SiC by chimney-type vertical hot-wall chemical vapor depositionen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen
dc.identifier.volume40-
dc.identifier.issue4B-
dc.identifier.spageL374-
dc.identifier.epageL376-
dc.relation.doi10.1143/JJAP.40.L374-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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