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dc.contributor.authorDanno, Ken
dc.contributor.authorHori, Ten
dc.contributor.authorKimoto, Ten
dc.date.accessioned2008-03-18T01:07:23Z-
dc.date.available2008-03-18T01:07:23Z-
dc.date.issued2007-03-01-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/2433/50215-
dc.language.isoeng-
dc.publisherAMER INST PHYSICSen
dc.rightsCopyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en
dc.titleImpacts of growth parameters on deep levels in n-type 4H-SiCen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleJOURNAL OF APPLIED PHYSICSen
dc.identifier.volume101-
dc.identifier.issue5-
dc.relation.doi10.1063/1.2437666-
dc.textversionpublisher-
dc.identifier.artnum053709-
dc.relation.urlhttp://link.aip.org/link/?jap/101/053709-
dcterms.accessRightsopen access-
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