Electric resistance of magnetic domain wall in NiFe wires with CoSm pinning pads

Abstract

The contribution of a magnetic domain wall to electric resistivity was measured using NiFe wires (width: 1 μm) partially covered with hard magnetic pads (CoSm). When the wire is covered with N pinning pads, 2Ndomain walls can be produced in the wire by reversing the magnetization only at the uncovered parts. The resistance for the magnetically saturated state (no domain wallstructure) and that for the magnetic structure with 2Ndomain walls were compared at zero applied field. It was found that the resistance is smaller when magnetic domain walls exist, and that the domain wallresistance is almost temperature independent.