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dc.contributor.authorMatsunami, Hen
dc.contributor.authorKimoto, Ten
dc.contributor.authorYano, Hen
dc.date.accessioned2007-03-28T03:31:40Z-
dc.date.available2007-03-28T03:31:40Z-
dc.date.issued2003-
dc.identifier.issn0916-8524-
dc.identifier.urihttp://hdl.handle.net/2433/5552-
dc.language.isoeng-
dc.publisherIEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENGen
dc.subjectsilicon carbideen
dc.subjectSiO2/4H-SiC interfaceen
dc.subjectC-V characteristicsen
dc.subjectconductance methoden
dc.subjectchannel mobilityen
dc.titleHetero-interface properties of SiO2/4H-SiC on various crystal orientationsen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleIEICE TRANSACTIONS ON ELECTRONICSen
dc.identifier.volumeE86C-
dc.identifier.issue10-
dc.identifier.spage1943-
dc.identifier.epage1948-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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