1. Kyoto University Research Information Repository
  2. 090_Graduate School of Engineering
  3. Graduate School of Engineering Literature Database
Downloads: 0

    Please use this identifier to cite or link to this item: http://hdl.handle.net/2433/6145
Files in This Item:
There are no files associated with this item.
Full metadata record
DC FieldValueLanguage
dc.contributor.authorNakamura, Sen
dc.contributor.authorKimoto, Ten
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T03:58:21Z-
dc.date.available2007-03-28T03:58:21Z-
dc.date.issued2002-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/2433/6145-
dc.language.isoeng-
dc.publisherINST PURE APPLIED PHYSICSen
dc.subjectsilicon carbide (SiC)en
dc.subjectchemical vapor deposition (CVD)en
dc.subjectdeep-level transient spectroscopy (DLTS)en
dc.subjectdeep-level transient Fourier spectroscopy (DLTFS)en
dc.subjectZ(1) centeren
dc.titleHigh-sensitivity analysis of Z(1) center concentration in 4H-SiC grown by horizontal cold-wall chemical vapor depositionen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen
dc.identifier.volume41-
dc.identifier.issue5A-
dc.identifier.spage2987-
dc.identifier.epage2988-
dc.relation.doi10.1143/JJAP.41.2987-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

Show simple item record

Export to RefWorks


Export Format: 


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.