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| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| v4-p22.pdf | 45.76 kB | Adobe PDF | 見る/開く |
| タイトル: | Electrical Properties of Transparent Doped Titania Films by Sol-Gel Method (SOLID STATE CHEMISTRY-Amorphous Materials) |
| 著者: | Lin, Hong Uchino, Takashi Kozuka, Hiromitsu Yoko, Toshinobu |
| キーワード: | Transparent semiconductive films Sol-gel method Titania films Electrical resistivity pn type solar cell |
| 発行日: | Mar-1998 |
| 出版者: | Institute for Chemical Research, Kyoto University |
| 誌名: | ICR Annual Report |
| 巻: | 4 |
| 開始ページ: | 22 |
| 終了ページ: | 23 |
| 抄録: | Transparent semiconductive TiO2 films co-doped with Ru and Ta (Nb), and Co and Nb (Sb) were prepared on SiO2 glass substrates by the sol-gel method using Ti(OC3H7 i)4 solutions. The solution preparation condition, solution composition, dopant content and heat-treatment temperature all severely affected the electrical resistivity of the resultant films. TiO2 films co-doped with Ru and Ta (Nb) showed n-type conductivity, while those co-doped with Co and Nb (Sb) showed p-type conductivity. It seems that the obtained films can be utilized for assembling all-solid-state TiO2-based pn type solar cell. |
| URI: | http://hdl.handle.net/2433/65157 |
| 出現コレクション: | Vol.4 (1997) |
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