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dc.contributor.authorTerashima, Takahitoen
dc.contributor.authorChong, Iksuen
dc.contributor.authorTakano, Mikioen
dc.date.accessioned2008-08-25T06:06:37Z-
dc.date.available2008-08-25T06:06:37Z-
dc.date.issued1998-03-
dc.identifier.issn1342-0321-
dc.identifier.urihttp://hdl.handle.net/2433/65159-
dc.description.abstractSingle crystals of the heavily Pb-substituted Bi-2201 phase were grown to a typical planar shape of 6 x 3 x 0.03 mm3 by using a floating zone method [1]. These crystals with the highest Pb content ever reported are free from any structural modulation as examined by transmission electron microscopy, and the orthorhombic lattice parameters are a = 5.300(3) A, b = 5.392(3) A, and c = 24.603(5) A (V = 703.2 A3). Their superconducting properties can be modified within the over-doped region in such a way that the transition temperature, Tc, is raised from 3 K for the as-grown crystals to 23 K by annealing at 550 °C for 2 weeks in a vacuum of ~10-4 Pa. The out-of-plane resistivity of the as-grown crystals remains metallic down to 20 K, while it becomes semiconductive below 160 K after the annealing.en
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherInstitute for Chemical Research, Kyoto Universityen
dc.subjectBi-2201en
dc.subjectSingle-crystalen
dc.subjectFloating Zone methoden
dc.subjectPb-Substitutionen
dc.subjectAnisotropyen
dc.subject.ndc430-
dc.titleGrowth of heavily Pb-substituted Bi-2201 single crystals by a floating zone method (SOLID STATE CHEMISTRY-Artificial Lattice Compounds)en
dc.typearticle-
dc.type.niitypeArticle-
dc.identifier.ncidAA11061308-
dc.identifier.jtitleICR Annual Reporten
dc.identifier.volume4-
dc.identifier.spage18-
dc.identifier.epage19-
dc.textversionpublisher-
dc.sortkey11-
dcterms.accessRightsopen access-
dc.identifier.pissn1342-0321-
出現コレクション:Vol.4 (1997)

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