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dc.contributor.authorOkada, Ten
dc.contributor.authorKimoto, Ten
dc.contributor.authorNoda, Hen
dc.contributor.authorEbisui, Ten
dc.contributor.authorMatsunami, Hen
dc.contributor.authorInoko, Fen
dc.date.accessioned2007-03-28T04:16:38Z-
dc.date.available2007-03-28T04:16:38Z-
dc.date.issued2002-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/2433/6666-
dc.language.isoeng-
dc.publisherINST PURE APPLIED PHYSICSen
dc.subject4H-SiCen
dc.subjecthomoepitaxyen
dc.subjectoff-cut substrateen
dc.subjectsurface morphological faulten
dc.subjecttransmission electron microscopyen
dc.titleCorrespondence between surface morphological faults and crystallographic defects in 4H-SiC homoepitaxial filmen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen
dc.identifier.volume41-
dc.identifier.issue11A-
dc.identifier.spage6320-
dc.identifier.epage6326-
dc.relation.doi10.1143/JJAP.41.6320-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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