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    Please use this identifier to cite or link to this item: http://hdl.handle.net/2433/67217
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dc.contributor.authorSuda, J.en
dc.contributor.authorHorita, M.en
dc.contributor.authorArmitage, R.en
dc.contributor.authorKimoto, T.en
dc.date.accessioned2008-11-17T03:01:13Z-
dc.date.available2008-11-17T03:01:13Z-
dc.date.issued2007-
dc.identifier.issn0022-0248-
dc.identifier.urihttp://hdl.handle.net/2433/67217-
dc.language.isoeng-
dc.publisherELSEVIER SCIENCE BVen
dc.subjectdislocationen
dc.subjectstacking faulten
dc.subjectAlNen
dc.subjectnonpolaren
dc.subjectpolytypeen
dc.subjectSiCen
dc.titleA comparative study of nonpolar a-plane and m-plane AlN grown on 4H-SiC by plasma-assisted molecular-beam epitaxyen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleJOURNAL OF CRYSTAL GROWTHen
dc.identifier.volume301-
dc.identifier.spage410-
dc.identifier.epage413-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
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