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dc.contributor.authorArmitage, R.en
dc.contributor.authorHorita, M.en
dc.contributor.authorSuda, J.en
dc.contributor.authorKimoto, T.en
dc.date.accessioned2008-11-17T03:01:15Z-
dc.date.available2008-11-17T03:01:15Z-
dc.date.issued2007-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/2433/67220-
dc.language.isoeng-
dc.publisherAMER INST PHYSICSen
dc.titlem-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga/N flux ratios on m-plane 4H-SiC substratesen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleJOURNAL OF APPLIED PHYSICSen
dc.identifier.volume101-
dc.identifier.issue3-
dc.textversionnone-
dc.identifier.artnum033534-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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