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| File | Description | Size | Format | |
|---|---|---|---|---|
| D_Akiyama_Masahiro.pdf | Dissertation_全文 | 16.92 MB | Adobe PDF | View/Open |
| ykogr02503.pdf | Abstract_要旨 | 191.58 kB | Adobe PDF | View/Open |
| Title: | 有機金属気相成長法によるSi基板上へのGaAsのヘテロエピタキシャル成長の研究 |
| Authors: | 秋山, 正博  |
| Author's alias: | Akiyama, Masahiro |
| Issue Date: | 23-Jul-1991 |
| Publisher: | 京都大学 |
| Conferring University: | 京都大学 |
| Degree Level: | 新制・論文博士 |
| Degree Discipline: | 博士(工学) |
| Degree Report no.: | 乙第7601号 |
| Degree no.: | 論工博第2503号 |
| Conferral date: | 1991-07-23 |
| Degree Call no.: | 新制||工||850(附属図書館) |
| Examination Committee members: | (主査)教授 松波 弘之, 教授 佐々木 昭夫, 教授 藤田 茂夫 |
| Provisions of the Ruling of Degree: | 学位規則第4条第2項該当 |
| DOI: | 10.11501/3057623 |
| URI: | http://hdl.handle.net/2433/74584 |
| Appears in Collections: | 090 Doctoral Dissertation (Philosophy (Engineering)) |
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