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dc.contributor.authorHorita, Masahiroen
dc.contributor.authorKimoto, Tsunenobuen
dc.contributor.authorSuda, Junen
dc.date.accessioned2009-06-23T05:26:00Z-
dc.date.available2009-06-23T05:26:00Z-
dc.date.issued2008-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/2433/78600-
dc.language.isoeng-
dc.publisherINST PURE APPLIED PHYSICSen
dc.subjectSiCen
dc.subjectgas etchingen
dc.subjectnonpolaren
dc.subjectsurface mophologyen
dc.subjecta-planeen
dc.subjectm-planeen
dc.titleSurface Morphologies of 4H-SiC(11(2)over-bar0) and (1(1)over-bar00) Treated by High-Temperature Gas Etchingen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleJAPANESE JOURNAL OF APPLIED PHYSICSen
dc.identifier.volume47-
dc.identifier.issue11-
dc.identifier.spage8388-
dc.identifier.epage8390-
dc.relation.doi10.1143/JJAP.47.8388-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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