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dc.contributor.authorHiyoshi, Toruen
dc.contributor.authorHori, Tsutomuen
dc.contributor.authorSuda, Junen
dc.contributor.authorKimoto, Tsunenobuen
dc.date.accessioned2009-06-23T05:26:11Z-
dc.date.available2009-06-23T05:26:11Z-
dc.date.issued2008-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/2433/78611-
dc.language.isoeng-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCen
dc.subjectbevel mesaen
dc.subjectjunction termination extension (JTE)en
dc.subjectPiNen
dc.subjectsilicon carbide (SiC)en
dc.subjectsimulationen
dc.titleSimulation and experimental study on the junction termination structure for high-voltage 4H-SiC PiN diodesen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleIEEE TRANSACTIONS ON ELECTRON DEVICESen
dc.identifier.volume55-
dc.identifier.issue8-
dc.identifier.spage1841-
dc.identifier.epage1846-
dc.relation.doi10.1109/TED.2008.926643-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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