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dc.contributor.authorPensl, Gerharden
dc.contributor.authorBeljakowa, Svetlanaen
dc.contributor.authorFrank, Thomasen
dc.contributor.authorGao, Kunyuanen
dc.contributor.authorSpeck, Florianen
dc.contributor.authorSeyller, Thomasen
dc.contributor.authorLey, Lotharen
dc.contributor.authorCiobanu, Florinen
dc.contributor.authorAfanas'ev, Valeryen
dc.contributor.authorStesmans, Andreen
dc.contributor.authorKimoto, Tsunenobuen
dc.contributor.authorSchoener, Adolfen
dc.date.accessioned2009-06-23T05:26:15Z-
dc.date.available2009-06-23T05:26:15Z-
dc.date.issued2008-
dc.identifier.issn0370-1972-
dc.identifier.urihttp://hdl.handle.net/2433/78615-
dc.language.isoeng-
dc.publisherWILEY-V C H VERLAG GMBHen
dc.titleAlternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitorsen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitlePHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICSen
dc.identifier.volume245-
dc.identifier.issue7-
dc.identifier.spage1378-
dc.identifier.epage1389-
dc.relation.doi10.1002/pssb.200844011-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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