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    Please use this identifier to cite or link to this item: http://hdl.handle.net/2433/78616
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dc.contributor.authorAlfieri, Gen
dc.contributor.authorKimoto, Ten
dc.date.accessioned2009-06-23T05:26:16Z-
dc.date.available2009-06-23T05:26:16Z-
dc.date.issued2008-
dc.identifier.issn1367-2630-
dc.identifier.urihttp://hdl.handle.net/2433/78616-
dc.language.isoeng-
dc.publisherIOP PUBLISHING LTDen
dc.titleEvidence for a hydrogen-related defect in implanted p-type 4H-SiCen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleNEW JOURNAL OF PHYSICSen
dc.identifier.volume10-
dc.relation.doi10.1088/1367-2630/10/7/073017-
dc.textversionnone-
dc.identifier.artnum073017-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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