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タイトル: | Nonpolar 4H-AlN grown on 4H-SiC (1(1)over-bar00) with reduced stacking fault density realized by persistent layer-by-layer growth |
著者: | Horita, Masahiro Kimoto, Tsunenobu ![]() ![]() ![]() Suda, Jun ![]() |
発行日: | 25-Aug-2008 |
出版者: | American Institute of Physics |
誌名: | APPLIED PHYSICS LETTERS |
巻: | 93 |
号: | 8 |
論文番号: | 082106 |
抄録: | Nonpolar AlN layers were grown on 4H-SiC (1[overline 1]00) substrates by plasma-assisted molecular-beam epitaxy. By using SiC substrates with well-formed step-and-terrace structures, stable layer-by-layer growth of 4H-AlN (1[overline 1]00) can be realized. The layer-by-layer growth is confirmed by observations of anisotropic two-dimensional AlN islands on the grown surface as well as persistent reflection high-energy electron diffraction intensity oscillations. Cross-sectional transmission electron microscopy observations reveal that stacking fault generation during growth is suppressed and the stacking fault density is reduced to 1×106 cm−1. |
著作権等: | Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
URI: | http://hdl.handle.net/2433/84574 |
DOI(出版社版): | 10.1063/1.2976559 |
関連リンク: | http://link.aip.org/link/?APPLAB/93/082106/1 |
出現コレクション: | 学術雑誌掲載論文等 |

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