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Title: | Nonpolar 4H-AlN grown on 4H-SiC (1(1)over-bar00) with reduced stacking fault density realized by persistent layer-by-layer growth |
Authors: | Horita, Masahiro Kimoto, Tsunenobu https://orcid.org/0000-0002-6649-2090 (unconfirmed) Suda, Jun |
Issue Date: | 25-Aug-2008 |
Publisher: | American Institute of Physics |
Journal title: | APPLIED PHYSICS LETTERS |
Volume: | 93 |
Issue: | 8 |
Thesis number: | 082106 |
Abstract: | Nonpolar AlN layers were grown on 4H-SiC (1[overline 1]00) substrates by plasma-assisted molecular-beam epitaxy. By using SiC substrates with well-formed step-and-terrace structures, stable layer-by-layer growth of 4H-AlN (1[overline 1]00) can be realized. The layer-by-layer growth is confirmed by observations of anisotropic two-dimensional AlN islands on the grown surface as well as persistent reflection high-energy electron diffraction intensity oscillations. Cross-sectional transmission electron microscopy observations reveal that stacking fault generation during growth is suppressed and the stacking fault density is reduced to 1×106 cm−1. |
Rights: | Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
URI: | http://hdl.handle.net/2433/84574 |
DOI(Published Version): | 10.1063/1.2976559 |
Related Link: | http://link.aip.org/link/?APPLAB/93/082106/1 |
Appears in Collections: | Journal Articles |
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