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Title: Nonpolar 4H-AlN grown on 4H-SiC (1(1)over-bar00) with reduced stacking fault density realized by persistent layer-by-layer growth
Authors: Horita, Masahiro
Kimoto, Tsunenobu  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-6649-2090 (unconfirmed)
Suda, Jun  KAKEN_id
Issue Date: 25-Aug-2008
Publisher: American Institute of Physics
Journal title: APPLIED PHYSICS LETTERS
Volume: 93
Issue: 8
Thesis number: 082106
Abstract: Nonpolar AlN layers were grown on 4H-SiC (1[overline 1]00) substrates by plasma-assisted molecular-beam epitaxy. By using SiC substrates with well-formed step-and-terrace structures, stable layer-by-layer growth of 4H-AlN (1[overline 1]00) can be realized. The layer-by-layer growth is confirmed by observations of anisotropic two-dimensional AlN islands on the grown surface as well as persistent reflection high-energy electron diffraction intensity oscillations. Cross-sectional transmission electron microscopy observations reveal that stacking fault generation during growth is suppressed and the stacking fault density is reduced to 1×106 cm−1.
Rights: Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
URI: http://hdl.handle.net/2433/84574
DOI(Published Version): 10.1063/1.2976559
Related Link: http://link.aip.org/link/?APPLAB/93/082106/1
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