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dc.contributor.authorShimada, Takahiroen
dc.contributor.authorUmeno, Yoshitakaen
dc.contributor.authorKitamura, Takayukien
dc.date.accessioned2009-08-05T02:35:52Z-
dc.date.available2009-08-05T02:35:52Z-
dc.date.issued2008-03-
dc.identifier.issn1098-0121-
dc.identifier.urihttp://hdl.handle.net/2433/84622-
dc.description.abstractWe investigated the atomistic and electronic structure of the 90° domain wall in PbTiO3 and the fundamental mechanism of domain switching induced by shear stress using first-principles density functional theory calculations within the local density approximation. Under strain-free condition, the magnitude of polarization at the center of the domain wall decreased by 20% from that of the bulk, and the direction rotated within the transition region of 1.3 nm. Under strain, the applied shear deformation concentrated near the 90° domain wall, and the domain wall began to migrate in a direction perpendicular to itself after the stress reached the critical magnitude of 152 MPa. The migration direction was governed by the shearing direction. During stress-induced domain switching, a Pb-O covalent bond at the center of the domain wall broke, and concurrently, another bond on the neighboring Pb-O site was formed with a large movement of the Pb atom. Thus, reconstruction of the Pb-O bond was associated with the domain switching.en
dc.language.isoeng-
dc.publisherAmerican Physical Societyen
dc.rights© 2008 The American Physical Societyen
dc.titleAb initio study of stress-induced domain switching in PbTiO3en
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.ncidAA11187113-
dc.identifier.jtitlePHYSICAL REVIEW Ben
dc.identifier.volume77-
dc.identifier.issue9-
dc.relation.doi10.1103/PhysRevB.77.094105-
dc.textversionpublisher-
dc.identifier.artnum094105-
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevB.77.094105-
dcterms.accessRightsopen access-
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