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dc.contributor.authorYano, Hen
dc.contributor.authorKatafuchi, Fen
dc.contributor.authorKimoto, Ten
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T03:59:32Z-
dc.date.available2007-03-28T03:59:32Z-
dc.date.issued1999-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/2433/8475-
dc.language.isoeng-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCen
dc.subjectdeep interface statesen
dc.subjectfixed oxide chargesen
dc.subjectinterfaceen
dc.subjectMOSen
dc.subjectMOSFET'sen
dc.subjectreoxidation annealen
dc.subjectsilicon carbideen
dc.subjectwet oxidationen
dc.titleEffects of wet oxidation/anneal on interface properties of thermally oxidized SiO2/SiC MOS system and MOSFET'sen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleIEEE TRANSACTIONS ON ELECTRON DEVICESen
dc.identifier.volume46-
dc.identifier.issue3-
dc.identifier.spage504-
dc.identifier.epage510-
dc.relation.doi10.1109/16.748869-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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