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| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| PhysRevB.77.193203.pdf | 142.34 kB | Adobe PDF | 見る/開く |
| タイトル: | Dynamics of biexciton localization in AlxGa1-xN mixed crystals under exciton resonant excitation |
| 著者: | Hirano, Daisuke Tayagaki, Takeshi Yamada, Yoichi Kanemitsu, Yoshihiko    https://orcid.org/0000-0002-0788-131X (unconfirmed) |
| 著者名の別形: | 金光, 義彦 |
| キーワード: | aluminium compounds biexcitons gallium compounds III-V semiconductors photoexcitation photoluminescence red shift statistical mechanics wide band gap semiconductors |
| 発行日: | May-2008 |
| 出版者: | American Physical Society |
| 誌名: | Physical Review B |
| 巻: | 77 |
| 号: | 19 |
| 論文番号: | 193203 |
| 記述: | We report the localization dynamics of biexcitons in AlxGa1−xN mixed crystals under exciton resonant excitation at low temperatures. During a few tens of picoseconds just after intense laser excitation, the photoluminescence (PL) spectral shape obeys an inverse Maxwell–Boltzmann distribution and free biexcitons dominate the PL spectrum. With a further increase in the delay time, the biexciton PL peak energy and edge energy shift to lower energies. These redshift behaviors in AlxGa1−xN mixed crystals are completely different from the behaviors of free biexcitons in GaN crystals. Our observations reveal the rapid transformation dynamics from free to localized biexcitons in band-tail states in AlxGa1−xN mixed crystals. |
| 著作権等: | c 2008 The American Physical Society |
| URI: | http://hdl.handle.net/2433/87351 |
| DOI(出版社版): | 10.1103/PhysRevB.77.193203 |
| 出現コレクション: | 学術雑誌掲載論文等 |
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