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dc.contributor.authorNagai, Takehikoen
dc.contributor.authorYamamoto, Aishien
dc.contributor.authorKanemitsu, Yoshihikoen
dc.contributor.alternative金光, 義彦ja
dc.date.accessioned2009-11-17T06:35:41Z-
dc.date.available2009-11-17T06:35:41Z-
dc.date.issued2005-03-
dc.identifier.issn1098-0121-
dc.identifier.urihttp://hdl.handle.net/2433/87362-
dc.description.abstractWe have studied the dynamics of highly dense exciton and electron-hole (e-h) systems in GaN by means of optical Kerr-gate time-resolved photoluminescence (PL) spectral measurements. In high-density e-h pairs above the Mott density, the broad electron-hole plasma emission appears at first, and then the narrow PL due to the biexciton and the inelastic exciton-exciton scattering is observed. When the pump light resonantly excites the A excitons, highly dense e-h systems with low effective temperatures are formed, and unique PL bands are observed. These PL peaks can be explained by a picture that the A excitons are scattered into the A, B , and C bands.en
dc.language.isoeng-
dc.publisherAmerican Physical Societyen
dc.rightsc 2005 The American Physical Societyen
dc.titlePhotoluminescence dynamics of GaN under intense band-to-band and exciton resonant excitationen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitlePhysical Review Ben
dc.identifier.volume71-
dc.identifier.issue12-
dc.relation.doi10.1103/PhysRevB.71.121201-
dc.textversionpublisher-
dc.identifier.artnum121201(R)-
dcterms.accessRightsopen access-
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