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完全メタデータレコード
| DCフィールド | 値 | 言語 |
|---|---|---|
| dc.contributor.author | Nagai, Takehiko | en |
| dc.contributor.author | Inagaki, Takeshi J. | en |
| dc.contributor.author | Kanemitsu, Yoshihiko | en |
| dc.contributor.alternative | 金光, 義彦 | ja |
| dc.date.accessioned | 2009-11-17T06:58:57Z | - |
| dc.date.available | 2009-11-17T06:58:57Z | - |
| dc.date.issued | 2004-02 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.uri | http://hdl.handle.net/2433/87369 | - |
| dc.description.abstract | We have studied the band-gap renormalization in highly excited GaN thin films by means of photoluminescence (PL) spectral measurements from 6 to 300 K. The renormalized band-gap energy is determined from the low-energy edge of the broad PL band due to the high-density electron and hole (e–h) plasmas. The reduction of the band-gap energy depends on the density of e–h plasmas, but is independent of temperature. The renormalized band-gap energy is calculated using two theoretical models. Our results suggest that the e–h pair correlation plays an essential role in highly excited GaN. | en |
| dc.language.iso | eng | - |
| dc.publisher | American Institute of Physics | en |
| dc.rights | c 2004 American Institute of Physics. | en |
| dc.title | Band-gap renormalization in highly excited GaN | en |
| dc.type | journal article | - |
| dc.type.niitype | Journal Article | - |
| dc.identifier.jtitle | Applied Physics Letters | en |
| dc.identifier.volume | 84 | - |
| dc.identifier.issue | 8 | - |
| dc.relation.doi | 10.1063/1.1650552 | - |
| dc.textversion | publisher | - |
| dc.identifier.artnum | 1284 | - |
| dcterms.accessRights | open access | - |
| 出現コレクション: | 学術雑誌掲載論文等 | |
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