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dc.contributor.authorFujikawa, Ken
dc.contributor.authorHarada, Sen
dc.contributor.authorIto, Aen
dc.contributor.authorKimoto, Ten
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T04:07:23Z-
dc.date.available2007-03-28T04:07:23Z-
dc.date.issued2004-
dc.identifier.issn0255-5476-
dc.identifier.urihttp://hdl.handle.net/2433/8742-
dc.language.isoeng-
dc.publisherTRANS TECH PUBLICATIONS LTDen
dc.subjectJFETen
dc.subjectdouble RESURF structureen
dc.title600V 4H-SiC RESURF-type JFETen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleSILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2en
dc.identifier.volume457-460-
dc.identifier.spage1189-
dc.identifier.epage1192-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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