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Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kaido, J | en |
dc.contributor.author | Kimoto, T | en |
dc.contributor.author | Suda, J | en |
dc.contributor.author | Matsunami, H | en |
dc.date.accessioned | 2007-03-28T04:23:00Z | - |
dc.date.available | 2007-03-28T04:23:00Z | - |
dc.date.issued | 2004 | - |
dc.identifier.issn | 0255-5476 | - |
dc.identifier.uri | http://hdl.handle.net/2433/8775 | - |
dc.language.iso | eng | - |
dc.publisher | TRANS TECH PUBLICATIONS LTD | en |
dc.subject | MOSFET | en |
dc.subject | SC-MOSFET | en |
dc.subject | threshold voltage | en |
dc.subject | N2O oxidation | en |
dc.subject | effective mobility | en |
dc.title | 4H-SiC MOSFETs with a novel channel structure (sandwiched channel MOSFET) | en |
dc.type | journal article | - |
dc.type.niitype | Journal Article | - |
dc.identifier.jtitle | SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2 | en |
dc.identifier.volume | 457-460 | - |
dc.identifier.spage | 1409 | - |
dc.identifier.epage | 1412 | - |
dc.textversion | none | - |
dcterms.accessRights | metadata only access | - |
Appears in Collections: | Graduate School of Engineering Literature Database |
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