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dc.contributor.authorKawano, Hen
dc.contributor.authorKimoto, Ten
dc.contributor.authorSuda, Jen
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T04:07:32Z-
dc.date.available2007-03-28T04:07:32Z-
dc.date.issued2005-
dc.identifier.issn0255-5476-
dc.identifier.urihttp://hdl.handle.net/2433/8789-
dc.language.isoeng-
dc.publisherTRANS TECH PUBLICATIONS LTDen
dc.subjectRESURFen
dc.subjectMOSFETen
dc.subjectdevice simulationen
dc.subjectpower deviceen
dc.titleDose designing for high-voltage 4H-SiC RESURF MOSFETs - device simulation and fabricationen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleSILICON CARBIDE AND RELATED MATERIALS 2004en
dc.identifier.volume483-
dc.identifier.spage809-
dc.identifier.epage812-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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