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dc.contributor.authorKimoto, Ten
dc.contributor.authorNakazawa, Sen
dc.contributor.authorFujihira, Ken
dc.contributor.authorHirao, Ten
dc.contributor.authorNakamura, Sen
dc.contributor.authorChen, Yen
dc.contributor.authorHashimoto, Ken
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T03:47:08Z-
dc.date.available2007-03-28T03:47:08Z-
dc.date.issued2002-
dc.identifier.issn0255-5476-
dc.identifier.urihttp://hdl.handle.net/2433/8793-
dc.language.isoeng-
dc.publisherTRANS TECH PUBLICATIONS LTDen
dc.subject(0338) planeen
dc.subject(1120) planeen
dc.subjectdeep-levelen
dc.subjecthomoepitaxial growthen
dc.subjecthot-wall CVDen
dc.subjectimpurity dopingen
dc.titleRecent achievements and future challenges in SiC homoepitaxial growthen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleSILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGSen
dc.identifier.volume389-3-
dc.identifier.spage165-
dc.identifier.epage170-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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