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dc.contributor.authorNegoro, Yen
dc.contributor.authorMiyamoto, Nen
dc.contributor.authorKimoto, Ten
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T03:37:35Z-
dc.date.available2007-03-28T03:37:35Z-
dc.date.issued2002-
dc.identifier.issn0255-5476-
dc.identifier.urihttp://hdl.handle.net/2433/8844-
dc.language.isoeng-
dc.publisherTRANS TECH PUBLICATIONS LTDen
dc.subjectavalanche breakdownen
dc.subjection implantationen
dc.subjectpn diodesen
dc.titleHigh-voltage SiC pn diodes with avalanche breakdown fabricated by aluminum or boron ion implantationen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleSILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGSen
dc.identifier.volume389-3-
dc.identifier.spage1273-
dc.identifier.epage1276-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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