33. A. Possible Liratation of the Precision of h/e^2 Determined from the Qnantum Hall Effect(Experiments,IV. Quantized Hall Effects)

Abstract

Random peaked structures have been observed both in the Hall and transverse resistivities traced against the gate voltage for Si-MOSFETs. The amplitude amounts to 30% Of the transverse resistivity when the electron concentration is 5 x 10^<11> cm^<-2>, at 12mK. These observations suggest that a limitation of the precision would exist for the determination of h/e^2 based on the quantum Hall effect.