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| 書誌情報 | ファイル |
|---|---|
| Bandgap shift by quantum confinement effect in <100> Si-nanowires derived from threshold-voltage shift of fabricated metal-oxide-semiconductor field effect transistors and theoretical calculations Yoshioka, Hironori; Morioka, Naoya; Suda, Jun; Kimoto, Tsunenobu (2011-03-15) JOURNAL OF APPLIED PHYSICS, 109(6) |  |
| Mobility oscillation by one-dimensional quantum confinement in Si-nanowire metal-oxide-semiconductor field effect transistors Yoshioka, Hironori; Morioka, Naoya; Suda, Jun; Kimoto, Tsunenobu (2009-08) JOURNAL OF APPLIED PHYSICS, 106(3) | |
| Mobility oscillation by one-dimensional quantum confinement in Si-nanowire metal-oxide-semiconductor field effect transistors Yoshioka, Hironori; Morioka, Naoya; Suda, Jun; Kimoto, Tsunenobu (2009) JOURNAL OF APPLIED PHYSICS, 106(3) |