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書誌情報 | ファイル |
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Optical properties of CdSe/MgS monolayer quantum wells and self-assembled quantum dots Funato, M; Omae, K; Kawakami, Y; Fujita, S; Bradford, C; Balocchi, A; Prior, KA; Cavenett, BC (2006-06) PHYSICAL REVIEW B, 73(24) | |
Second order optical effects in Au nanoparticle-deposited ZnO nanocrystallite films Ozga, K; Kawaharamura, T; Umar, AA; Koyama, M; Nouneh, K; Slezak, A; Fujita, S; Piasecki, M; Reshak, AH; Kityk, IV (2008) NANOTECHNOLOGY, 19(18) | |
Fast Neutrons Measured in Copper from the Hiroshima Atomic Bomb Dome Marchetti, AA; McAninch, JE; Rugel, G; Ruhm, W; Korschinek, G; Martinelli, RE; Faestermann, T; Knie, K; Egbert, SD; Wallner, A; Wallner, C; Tanaka, K; Endo, S; Hoshi, M; Shizuma, K; Fujita, S; Hasai, H; Imanaka, T; Straume, T (2009) RADIATION RESEARCH, 171(1): 118-122 | |
Effects of thermal annealing of ZnO layers grown by MBE Ogata, K; Sakurai, K; Fujita, S; Fujita, S; Matsushige, K (2000) JOURNAL OF CRYSTAL GROWTH, 214: 312-315 | |
Optical properties of Si-, Ge- and Sn-doped GaN Shikanai, A; Fukahori, H; Kawakami, Y; Hazu, K; Sota, T; Mitani, T; Mukai, T; Fujita, S (2003) PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 235(1): 26-30 | |
Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution Izumi, T; Narukawa, Y; Okamoto, K; Kawakami, Y; Fujita, S; Nakamura, S (2000) JOURNAL OF LUMINESCENCE, 87-9: 1196-1198 | |
Dimensionality of excitons in InGaN-based light emitting devices Kawakami, Y; Narukawa, Y; Omae, K; Fujita, S; Nakamura, S (2000) PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 178(1): 331-336 | |
Sub-microscopic transient lens spectroscopy of InGaN/GaN quantum wells Okamoto, K; Fujita, S; Kawakami, Y; Scherer, A (2003) PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 240(2): 368-371 | |
Effect of degree of localization and confinement dimensionality of excitons on their recombination process in CdSe/ZnSe/ZnSxSe1-x single quantum well structures Yamaguchi, S; Kurusu, H; Kawakami, Y; Fujita, S; Fujita, S (2000) PHYSICAL REVIEW B, 61(15): 10303-10313 | |
Effects of internal electric field and carrier density on transient absorption spectra in a thin GaN epilayer Omae, K; Kawakami, Y; Fujita, S; Yamada, M; Narukawa, Y; Mukai, T (2002) PHYSICAL REVIEW B, 65(7) |
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