ブラウズ : キーワード (0338) plane
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書誌情報 | ファイル |
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Breakdown fields along various crystal orientations in 4H-, 6H- and 3C-SiC Nakamura, SI; Kumagai, H; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 651-654 | |
Recent achievements and future challenges in SiC homoepitaxial growth Kimoto, T; Nakazawa, S; Fujihira, K; Hirao, T; Nakamura, S; Chen, Y; Hashimoto, K; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 165-170 |