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| 書誌情報 | ファイル |
|---|---|
| Optical-telecommunication-band fluorescence properties of Er3+-doped YAG nanocrystals synthesized by glycothermal method Nishi, M; Tanabe, S; Inoue, M; Takahashi, M; Fujita, K; Hirao, K (2005) OPTICAL MATERIALS, 27(4): 655-662 | |
| Luminescence properties of Zn nanowires prepared by electrochemical etching Chang, SS; Yoon, SO; Park, HJ; Sakai, A (2002) MATERIALS LETTERS, 53(6): 432-436 | |
| ZnO growth toward optical devices by MOVPE using N2O Ogata, K; Maejima, K; Fujita, S; Fujita, S (2001) JOURNAL OF ELECTRONIC MATERIALS, 30(6): 659-661 | |
| Improvements of ZnO qualities grown by metal-organic vapor phase epitaxy using a molecular beam epitaxy grown ZnO layer as a substrate Ogata, K; Kawanishi, T; Maejima, K; Sakurai, K; Fujita, S; Fujita, S (2001) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40(7A): L657-L659 | |
| Orientation effect on intersubband tunneling of quantum wells grown on high-index GaAs(n11)A (n <= 4) substrates Feng, JM; Asai, K; Narukawa, Y; Kawakami, Y; Fujita, S; Ohachi, T (2000) APPLIED SURFACE SCIENCE, 159: 532-539 | |
| Reduction of stacking faults in fast epitaxial growth of 4H-SiC and its impacts on high-voltage Schottky diodes Fujiwara, H; Kimoto, T; Tojo, T; Matsunami, H (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 151-154 | |
| Luminescence properties of spark-processed Si in air, O-2, and N-2 with low pressure Chang, SS; Kurokawa, S; Sakai, A (2006) APPLIED SURFACE SCIENCE, 252(12): 4048-4054 | |
| Carrier transport and optical properties of InGaNSQW with embedded AlGaN delta-layer Park, JW; Kaneta, A; Funato, M; Kawakami, Y (2006) IEEE JOURNAL OF QUANTUM ELECTRONICS, 42(9-10): 1023-1030 | |
| Near-field evidence of local polarized emission centers in InGaN/GaN materials Micheletto, Ruggero; Allegrini, Maria; Kawakami, Yoichi (2009) APPLIED PHYSICS LETTERS, 95(21) | |
| Submicron-scale photoluminescence of InGaN/GaN probed by confocal scanning laser microscopy Okamoto, K; Choi, J; Kawakami, Y; Terazima, M; Mukai, T; Fujita, S (2004) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43(2): 839-840 |