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dc.contributor.authorHiyoshi, Toruen
dc.contributor.authorKimoto, Tsunenobuen
dc.date.accessioned2010-04-19T05:59:55Z-
dc.date.available2010-04-19T05:59:55Z-
dc.date.issued2009-
dc.identifier.issn1882-0778-
dc.identifier.urihttp://hdl.handle.net/2433/109609-
dc.language.isoeng-
dc.publisherJAPAN SOCIETY APPLIED PHYSICSen
dc.titleReduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidationen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleAPPLIED PHYSICS EXPRESSen
dc.identifier.volume2-
dc.identifier.issue4-
dc.relation.doi10.1143/APEX.2.041101-
dc.textversionnone-
dc.identifier.artnum041101-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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