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| Title: | Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation |
| Authors: | Hiyoshi, Toru Kimoto, Tsunenobu    https://orcid.org/0000-0002-6649-2090 (unconfirmed) |
| Issue Date: | 2009 |
| Publisher: | JAPAN SOCIETY APPLIED PHYSICS |
| Journal title: | APPLIED PHYSICS EXPRESS |
| Volume: | 2 |
| Issue: | 4 |
| Thesis number: | 041101 |
| URI: | http://hdl.handle.net/2433/109609 |
| DOI(Published Version): | 10.1143/APEX.2.041101 |
| Link: | Web of Science |
| Appears in Collections: | Graduate School of Engineering Literature Database |
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