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PhysRevB.79.155307.pdf | 492.28 kB | Adobe PDF | 見る/開く |
タイトル: | Positive binding energy of a biexciton confined in a localization center formed in a single InxGa1-xN/GaN quantum disk |
著者: | Bardoux, R. Kaneta, A. Funato, M. https://orcid.org/0000-0002-5455-3757 (unconfirmed) Kawakami, Y. https://orcid.org/0000-0003-3752-1507 (unconfirmed) Kikuchi, A. Kishino, K. |
キーワード: | biexcitons binding energy gallium compounds III-V semiconductors indium compounds photoluminescence radiative lifetimes semiconductor quantum dots time resolved spectra wide band gap semiconductors |
発行日: | Apr-2009 |
出版者: | American Physical Society |
誌名: | PHYSICAL REVIEW B |
巻: | 79 |
号: | 15 |
論文番号: | 155307 |
抄録: | We report microphotoluminescence spectroscopy performed on individual and ensemble InGaN/GaN quantum disks (Q-disks). The typical spectrum of a single Q-disk exhibited the contribution of localization centers (LCs) formed in the InGaN active layer of the Q-disks, characterized by sharp lines appearing on the low energy side of the spectra. In addition, a broader emission peak identified as the luminescence of the quasi-two-dimensional (2D) InGaN active layer surrounding the LCs appears systematically at higher energy. Time-resolved photoluminescence experiment performed on single Q-disks exhibited the excitonic transfer, from the 2D InGaN active layer to LCs, at the submicroscopic scale. Excitation power dependence studies and linear polarization analysis allowed us to identify a biexciton complex confined in a LC in a single Q-disk with a surprising positive binding energy of 13 meV. The absence of screening effect by increasing the excitation power density and the fast excitonic radiative lifetime of a few hundred picoseconds that we measured on several individual Q-disks indicate that the absence of internal electric field in the structure can explain the observed positive biexciton binding energy. |
著作権等: | © 2009 The American Physical Society |
URI: | http://hdl.handle.net/2433/109849 |
DOI(出版社版): | 10.1103/PhysRevB.79.155307 |
関連リンク: | http://link.aps.org/doi/10.1103/PhysRevB.79.155307 |
出現コレクション: | 学術雑誌掲載論文等 |
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