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dc.contributor.authorFeng, Ganen
dc.contributor.authorSuda, Junen
dc.contributor.authorKimoto, Tsunenobuen
dc.date.accessioned2010-05-06T07:29:09Z-
dc.date.available2010-05-06T07:29:09Z-
dc.date.issued2009-03-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/2433/109896-
dc.description.abstract4H-SiC epilayers have been characterized by microphotoluminescence (micro-PL) spectroscopy and micro-PL intensity mapping at room temperature. A type of stacking fault (SF) with a peak emission wavelength at 480 nm (2.58 eV) has been identified. The shape of this SF is triangular revealed by the micro-PL intensity mapping. Conventional and high-resolution transmission electron microscopies have been carried out to investigate the structure of this SF. Its stacking sequence is determined as (3, 5) in Zhdanov’s notation, which is consistent with that of the triple Shockley SF. The formation mechanism of this SF is also discussed.en
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherAmerican Institute of Physicsen
dc.rightsCopyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in APPLIED PHYSICS LETTERS 94, 091910 (2009) and may be found at http://link.aip.org/link/APPLAB/v94/i9/p091910/s1en
dc.subjectphotoluminescenceen
dc.subjectsemiconductor epitaxial layersen
dc.subjectsilicon compoundsen
dc.subjectstacking faultsen
dc.subjecttransmission electron microscopyen
dc.subjectwide band gap semiconductorsen
dc.titleTriple Shockley type stacking faults in 4H-SiC epilayersen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.ncidAA00543431-
dc.identifier.jtitleAPPLIED PHYSICS LETTERSen
dc.identifier.volume94-
dc.identifier.issue9-
dc.relation.doi10.1063/1.3095508-
dc.textversionpublisher-
dc.identifier.artnum091910-
dc.relation.urlhttp://link.aip.org/link/APPLAB/v94/i9/p091910/s1-
dcterms.accessRightsopen access-
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