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| Title: | Triple Shockley type stacking faults in 4H-SiC epilayers |
| Authors: | Feng, Gan Suda, Jun  Kimoto, Tsunenobu   https://orcid.org/0000-0002-6649-2090 (unconfirmed) |
| Keywords: | photoluminescence semiconductor epitaxial layers silicon compounds stacking faults transmission electron microscopy wide band gap semiconductors |
| Issue Date: | Mar-2009 |
| Publisher: | American Institute of Physics |
| Journal title: | APPLIED PHYSICS LETTERS |
| Volume: | 94 |
| Issue: | 9 |
| Thesis number: | 091910 |
| Abstract: | 4H-SiC epilayers have been characterized by microphotoluminescence (micro-PL) spectroscopy and micro-PL intensity mapping at room temperature. A type of stacking fault (SF) with a peak emission wavelength at 480 nm (2.58 eV) has been identified. The shape of this SF is triangular revealed by the micro-PL intensity mapping. Conventional and high-resolution transmission electron microscopies have been carried out to investigate the structure of this SF. Its stacking sequence is determined as (3, 5) in Zhdanov’s notation, which is consistent with that of the triple Shockley SF. The formation mechanism of this SF is also discussed. |
| Rights: | Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in APPLIED PHYSICS LETTERS 94, 091910 (2009) and may be found at http://link.aip.org/link/APPLAB/v94/i9/p091910/s1 |
| URI: | http://hdl.handle.net/2433/109896 |
| DOI(Published Version): | 10.1063/1.3095508 |
| Related Link: | http://link.aip.org/link/APPLAB/v94/i9/p091910/s1 |
| Appears in Collections: | Journal Articles |
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