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| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| 1.3095508.pdf | 470.29 kB | Adobe PDF | 見る/開く |
| タイトル: | Triple Shockley type stacking faults in 4H-SiC epilayers |
| 著者: | Feng, Gan Suda, Jun  Kimoto, Tsunenobu   https://orcid.org/0000-0002-6649-2090 (unconfirmed) |
| キーワード: | photoluminescence semiconductor epitaxial layers silicon compounds stacking faults transmission electron microscopy wide band gap semiconductors |
| 発行日: | Mar-2009 |
| 出版者: | American Institute of Physics |
| 誌名: | APPLIED PHYSICS LETTERS |
| 巻: | 94 |
| 号: | 9 |
| 論文番号: | 091910 |
| 抄録: | 4H-SiC epilayers have been characterized by microphotoluminescence (micro-PL) spectroscopy and micro-PL intensity mapping at room temperature. A type of stacking fault (SF) with a peak emission wavelength at 480 nm (2.58 eV) has been identified. The shape of this SF is triangular revealed by the micro-PL intensity mapping. Conventional and high-resolution transmission electron microscopies have been carried out to investigate the structure of this SF. Its stacking sequence is determined as (3, 5) in Zhdanov’s notation, which is consistent with that of the triple Shockley SF. The formation mechanism of this SF is also discussed. |
| 著作権等: | Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in APPLIED PHYSICS LETTERS 94, 091910 (2009) and may be found at http://link.aip.org/link/APPLAB/v94/i9/p091910/s1 |
| URI: | http://hdl.handle.net/2433/109896 |
| DOI(出版社版): | 10.1063/1.3095508 |
| 関連リンク: | http://link.aip.org/link/APPLAB/v94/i9/p091910/s1 |
| 出現コレクション: | 学術雑誌掲載論文等 |
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