ダウンロード数: 336
このアイテムのファイル:
ファイル | 記述 | サイズ | フォーマット | |
---|---|---|---|---|
1.3265732.pdf | 297.18 kB | Adobe PDF | 見る/開く |
タイトル: | Near-field evidence of local polarized emission centers in InGaN/GaN materials |
著者: | Micheletto, Ruggero Allegrini, Maria Kawakami, Yoichi ![]() ![]() ![]() |
キーワード: | gallium compounds indium compounds light polarisation photoluminescence semiconductor quantum wells semiconductor technology |
発行日: | Nov-2009 |
出版者: | American Institute of Physics |
誌名: | APPLIED PHYSICS LETTERS |
巻: | 95 |
号: | 21 |
論文番号: | 211904 |
抄録: | We study the optical polarization properties of confined structures in InGaN/GaN single quantum well devices. Using a near-field optical setup we investigated the photoluminescence maps with a polarization-modulation method. If the optical emissions have a preferred polarization orientation, our apparatus yields a signal that is proportional to the degree of polarization. We could demonstrate that within the quantum well there are localized submicrometer centers that emit strongly oriented light. This points toward the existence of quantum-dot like confined asymmetric domains hidden within the quantum well. |
著作権等: | Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in APPLIED PHYSICS LETTERS 95, 211904 (2009) and may be found at http://link.aip.org/link/APPLAB/v95/i21/p211904/s1 |
URI: | http://hdl.handle.net/2433/109905 |
DOI(出版社版): | 10.1063/1.3265732 |
関連リンク: | http://link.aip.org/link/APPLAB/v95/i21/p211904/s1 |
出現コレクション: | 学術雑誌掲載論文等 |
![](/dspace/image/articlelinker.gif)
このリポジトリに保管されているアイテムはすべて著作権により保護されています。