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Title: All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress: Definite breakdown of the quasicubic approximation
Authors: Ishii, Ryota  kyouindb  KAKEN_id  orcid (unconfirmed)
Kaneta, Akio
Funato, Mitsuru  kyouindb  KAKEN_id  orcid (unconfirmed)
Kawakami, Yoichi  kyouindb  KAKEN_id
Author's alias: 石井, 良太
Issue Date: Apr-2010
Publisher: American Physical Society
Journal title: Physical Review B
Volume: 81
Issue: 15
Thesis number: 155202
Abstract: Reflectance spectroscopy was performed for nonpolar and semipolar bulk GaN substrates under uniaxial stress. The exciton-transition energies and oscillator strengths clearly depended on uniaxial stress. The results were interpreted by group theory on excitons and analyzed in terms of the effective Hamiltonian proposed by Bir and Pikus. In the Hamiltonian, the short-range Coulomb interaction was taken into consideration. This approach allows all exciton deformation potentials to be determined without the quasicubic approximation and we found that the exciton deformation potentials in GaN considerably deviate from the quasicubic approximation.
Rights: © 2010 The American Physical Society
DOI(Published Version): 10.1103/PhysRevB.81.155202
Appears in Collections:Journal Articles

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