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PhysRevB.81.155202.pdf | 719.38 kB | Adobe PDF | 見る/開く |
タイトル: | All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress: Definite breakdown of the quasicubic approximation |
著者: | Ishii, Ryota https://orcid.org/0000-0002-1413-4849 (unconfirmed) Kaneta, Akio Funato, Mitsuru https://orcid.org/0000-0002-5455-3757 (unconfirmed) Kawakami, Yoichi https://orcid.org/0000-0003-3752-1507 (unconfirmed) |
著者名の別形: | 石井, 良太 |
発行日: | Apr-2010 |
出版者: | American Physical Society |
誌名: | Physical Review B |
巻: | 81 |
号: | 15 |
論文番号: | 155202 |
抄録: | Reflectance spectroscopy was performed for nonpolar and semipolar bulk GaN substrates under uniaxial stress. The exciton-transition energies and oscillator strengths clearly depended on uniaxial stress. The results were interpreted by group theory on excitons and analyzed in terms of the effective Hamiltonian proposed by Bir and Pikus. In the Hamiltonian, the short-range Coulomb interaction was taken into consideration. This approach allows all exciton deformation potentials to be determined without the quasicubic approximation and we found that the exciton deformation potentials in GaN considerably deviate from the quasicubic approximation. |
著作権等: | © 2010 The American Physical Society |
URI: | http://hdl.handle.net/2433/128922 |
DOI(出版社版): | 10.1103/PhysRevB.81.155202 |
出現コレクション: | 学術雑誌掲載論文等 |
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