Downloads: 0

Files in This Item:
There are no files associated with this item.
Full metadata record
DC FieldValueLanguage
dc.contributor.authorKawahara, Koutarouen
dc.contributor.authorSuda, Junen
dc.contributor.authorPensl, Gerharden
dc.contributor.authorKimoto, Tsunenobuen
dc.date.accessioned2011-09-13T00:29:10Z-
dc.date.available2011-09-13T00:29:10Z-
dc.date.issued2010-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/2433/146887-
dc.language.isoeng-
dc.publisherAMER INST PHYSICSen
dc.titleReduction of deep levels generated by ion implantation into n- and p-type 4H-SiCen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleJOURNAL OF APPLIED PHYSICSen
dc.identifier.volume108-
dc.identifier.issue3-
dc.relation.doi10.1063/1.3456159-
dc.textversionnone-
dc.identifier.artnum33706-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

Show simple item record

Export to RefWorks


Export Format: 


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.