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DCフィールド | 値 | 言語 |
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dc.contributor.author | Funato, Mitsuru | en |
dc.contributor.author | Kotani, Teruhisa | en |
dc.contributor.author | Kondou, Takeshi | en |
dc.contributor.author | Kawakami, Yoichi | en |
dc.contributor.alternative | 船戸, 充 | ja |
dc.date.accessioned | 2012-05-09T02:35:36Z | - |
dc.date.available | 2012-05-09T02:35:36Z | - |
dc.date.issued | 2012-04 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/2433/155465 | - |
dc.description.abstract | Semipolar {n[n¯]01} InGaN/GaN quantum wells (QWs) (n = 1−3) are fabricated on top of GaN microstructures, which consist of semipolar {1Ī01} facets. Semipolar planes are obtained via regrowth of three-dimensional structures on (0001) GaN templates under controlled growth conditions. Compared to QWs on {1Ī01} facets, {n[n¯]01} ridge QWs show an intense emission at ∼ 440 nm. Time resolved photoluminescence reveals that the radiative lifetime of excitons in {n[n¯]01} InGaN ridge QWs at 13 K is 310 ps, which is comparable to that in {1Ī01} QWs. The estimated internal quantum efficiency at room temperature is as high as 57%. | en |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | American Institute of Physics | en |
dc.rights | © 2012 American Institute of Physics. | en |
dc.subject | excitons | en |
dc.subject | gallium compounds | en |
dc.subject | III-V semiconductors | en |
dc.subject | indium compounds | en |
dc.subject | MOCVD | en |
dc.subject | photoluminescence | en |
dc.subject | radiative lifetimes | en |
dc.subject | semiconductor growth | en |
dc.subject | semiconductor quantum wells | en |
dc.subject | time resolved spectra | en |
dc.subject | vapour phase epitaxial growth | en |
dc.subject | wide band gap semiconductors | en |
dc.title | Semipolar {n[n¯]01} InGaN/GaN ridge quantum wells (n = 1−3) fabricated by a regrowth technique | en |
dc.type | journal article | - |
dc.type.niitype | Journal Article | - |
dc.identifier.ncid | AA00543431 | - |
dc.identifier.jtitle | Applied Physics Letters | en |
dc.identifier.volume | 100 | - |
dc.identifier.issue | 16 | - |
dc.relation.doi | 10.1063/1.4704779 | - |
dc.textversion | publisher | - |
dc.identifier.artnum | 162107 | - |
dcterms.accessRights | open access | - |
出現コレクション: | 学術雑誌掲載論文等 |
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