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| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| 1.4704779.pdf | 1.14 MB | Adobe PDF | 見る/開く |
| タイトル: | Semipolar {n[n¯]01} InGaN/GaN ridge quantum wells (n = 1−3) fabricated by a regrowth technique |
| 著者: | Funato, Mitsuru    https://orcid.org/0000-0002-5455-3757 (unconfirmed)Kotani, Teruhisa Kondou, Takeshi Kawakami, Yoichi https://orcid.org/0000-0003-3752-1507 (unconfirmed) |
| 著者名の別形: | 船戸, 充 |
| キーワード: | excitons gallium compounds III-V semiconductors indium compounds MOCVD photoluminescence radiative lifetimes semiconductor growth semiconductor quantum wells time resolved spectra vapour phase epitaxial growth wide band gap semiconductors |
| 発行日: | Apr-2012 |
| 出版者: | American Institute of Physics |
| 誌名: | Applied Physics Letters |
| 巻: | 100 |
| 号: | 16 |
| 論文番号: | 162107 |
| 抄録: | Semipolar {n[n¯]01} InGaN/GaN quantum wells (QWs) (n = 1−3) are fabricated on top of GaN microstructures, which consist of semipolar {1Ī01} facets. Semipolar planes are obtained via regrowth of three-dimensional structures on (0001) GaN templates under controlled growth conditions. Compared to QWs on {1Ī01} facets, {n[n¯]01} ridge QWs show an intense emission at ∼ 440 nm. Time resolved photoluminescence reveals that the radiative lifetime of excitons in {n[n¯]01} InGaN ridge QWs at 13 K is 310 ps, which is comparable to that in {1Ī01} QWs. The estimated internal quantum efficiency at room temperature is as high as 57%. |
| 著作権等: | © 2012 American Institute of Physics. |
| URI: | http://hdl.handle.net/2433/155465 |
| DOI(出版社版): | 10.1063/1.4704779 |
| 出現コレクション: | 学術雑誌掲載論文等 |
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