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dc.contributor.authorKaneko, Hiromien
dc.contributor.authorKimoto, Tsunenobuen
dc.date.accessioned2012-11-02T06:06:23Z-
dc.date.available2012-11-02T06:06:23Z-
dc.date.issued2011-06-27-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/2433/160625-
dc.description.abstractElectron irradiation has been applied to the formation of a semi-insulating 4H-SiC(0001) layer. The resistivity of the semi-insulating layer, which was irradiated with a fluence of 1.9 × 10^[18] cm^[−2] at 400 keV, exceeded 10^[10] Ω cm at room temperature. From capacitance-voltage characteristics of Schottky structure, the depth of the semi-insulating layer was estimated to be 10 μm, indicating that the whole region of lightly-doped n-type epilayer was converted to the semi-insulating layer by electron irradiation. The semi-insulating property can be ascribed to electron trapping at the Z_[1/2] and EH_[6/7] centers generated by electron irradiation. The threshold energy for the generation of Z_[1/2] center was about 100 keV.en
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherAmerican Institute of Physicsen
dc.rightsCopyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in APPLIED PHYSICS LETTERS 98, 262106 (2011) and may be found at http://link.aip.org/link/?apl/98/262106en
dc.subjectcapacitanceen
dc.subjectdeep levelsen
dc.subjectelectrical resistivityen
dc.subjectelectron beam effectsen
dc.subjectelectron trapsen
dc.subjectSchottky barriersen
dc.subjectsemiconductor epitaxial layersen
dc.subjectsemiconductor growthen
dc.subjectsilicon compoundsen
dc.subjectwide band gap semiconductorsen
dc.subjectZ-centresen
dc.titleFormation of a semi-insulating layer in n-type 4H-SiC by electron irradiationen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.ncidAA00543431-
dc.identifier.jtitleAPPLIED PHYSICS LETTERSen
dc.identifier.volume98-
dc.identifier.issue26-
dc.relation.doi10.1063/1.3604795-
dc.textversionpublisher-
dc.identifier.artnum262106-
dc.relation.urlhttp://link.aip.org/link/?apl/98/262106-
dcterms.accessRightsopen access-
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