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Title: Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence mapping
Authors: Feng, Gan
Suda, Jun  KAKEN_id
Kimoto, Tsunenobu  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-6649-2090 (unconfirmed)
Keywords: carrier lifetime
photoluminescence
screw dislocations
semiconductor epitaxial layers
silicon compounds
wide band gap semiconductors
Issue Date: 1-Aug-2011
Publisher: American Institute of Physics
Journal title: JOURNAL OF APPLIED PHYSICS
Volume: 110
Issue: 3
Thesis number: 033525
Abstract: Threading dislocations (TDs) in 4H-SiC epilayers have been investigated by means of micro-photoluminescence (μ-PL) mapping at room temperature. Enhanced nonradiative recombination at TDs was confirmed experimentally, resulting in a reduced local PL emission intensity in the μ-PL intensity map performed at 390 nm (near band-edge emission). The behavior of nonradiative recombination at TDs depends on the dislocation type: the screw type of TDs shows stronger effect on the nonradiative recombination activity than the edge type, evidencing a larger local reduction of PL emission intensity. Furthermore, the contrast of TDs in the μ-PL intensity map greatly depends on the carrier lifetimes of the 4H-SiC epilayers. Lifetimes longer than 0.5 μs are essential to obtain a discernible contrast for the individual TDs.
Rights: Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in JOURNAL OF APPLIED PHYSICS 110, 033525 (2011) and may be found at http://link.aip.org/link/?jap/110/033525
URI: http://hdl.handle.net/2433/160638
DOI(Published Version): 10.1063/1.3622336
Related Link: http://link.aip.org/link/?jap/110/033525
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