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| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| 1.3622336.pdf | 2.28 MB | Adobe PDF | 見る/開く |
| タイトル: | Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence mapping |
| 著者: | Feng, Gan Suda, Jun  Kimoto, Tsunenobu   https://orcid.org/0000-0002-6649-2090 (unconfirmed) |
| キーワード: | carrier lifetime photoluminescence screw dislocations semiconductor epitaxial layers silicon compounds wide band gap semiconductors |
| 発行日: | 1-Aug-2011 |
| 出版者: | American Institute of Physics |
| 誌名: | JOURNAL OF APPLIED PHYSICS |
| 巻: | 110 |
| 号: | 3 |
| 論文番号: | 033525 |
| 抄録: | Threading dislocations (TDs) in 4H-SiC epilayers have been investigated by means of micro-photoluminescence (μ-PL) mapping at room temperature. Enhanced nonradiative recombination at TDs was confirmed experimentally, resulting in a reduced local PL emission intensity in the μ-PL intensity map performed at 390 nm (near band-edge emission). The behavior of nonradiative recombination at TDs depends on the dislocation type: the screw type of TDs shows stronger effect on the nonradiative recombination activity than the edge type, evidencing a larger local reduction of PL emission intensity. Furthermore, the contrast of TDs in the μ-PL intensity map greatly depends on the carrier lifetimes of the 4H-SiC epilayers. Lifetimes longer than 0.5 μs are essential to obtain a discernible contrast for the individual TDs. |
| 著作権等: | Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in JOURNAL OF APPLIED PHYSICS 110, 033525 (2011) and may be found at http://link.aip.org/link/?jap/110/033525 |
| URI: | http://hdl.handle.net/2433/160638 |
| DOI(出版社版): | 10.1063/1.3622336 |
| 関連リンク: | http://link.aip.org/link/?jap/110/033525 |
| 出現コレクション: | 学術雑誌掲載論文等 |
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