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Title: | Quantum-confinement effects on conduction band structure of rectangular cross-sectional GaAs nanowires |
Authors: | Tanaka, H. Morioka, N. Mori, S. Suda, J. Kimoto, T. |
Author's alias: | 田中, 一 |
Issue Date: | 7-Feb-2014 |
Publisher: | AIP Publishing LLC. |
Journal title: | Journal of Applied Physics |
Volume: | 115 |
Issue: | 5 |
Thesis number: | 053713 |
Abstract: | The conduction band structure and electron effective mass of GaAs nanowires with various cross-sectional shapes and orientations were calculated by two methods, a tight-binding method and an effective mass equation taking the bulk full-band structure into account. The effective mass of nanowires increases as the cross-sectional size decreases, and this increase in effective mass depends on the orientations and substrate faces of nanowires. Among [001], [110], and [111]-oriented rectangular cross-sectional GaAs nanowires, [110]-oriented nanowires with wider width along the [001] direction showed the lightest effective mass. This dependence originates from the anisotropy of the Γ valley of bulk GaAs. The relationship between effective mass and bulk band structure is discussed. |
Rights: | Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
URI: | http://hdl.handle.net/2433/192255 |
DOI(Published Version): | 10.1063/1.4864490 |
Appears in Collections: | Journal Articles |
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