Downloads: 258

Files in This Item:
File Description SizeFormat 
1.4864490.pdf1.75 MBAdobe PDFView/Open
Title: Quantum-confinement effects on conduction band structure of rectangular cross-sectional GaAs nanowires
Authors: Tanaka, H.
Morioka, N.
Mori, S.
Suda, J.
Kimoto, T.
Author's alias: 田中, 一
Issue Date: 7-Feb-2014
Publisher: AIP Publishing LLC.
Journal title: Journal of Applied Physics
Volume: 115
Issue: 5
Thesis number: 053713
Abstract: The conduction band structure and electron effective mass of GaAs nanowires with various cross-sectional shapes and orientations were calculated by two methods, a tight-binding method and an effective mass equation taking the bulk full-band structure into account. The effective mass of nanowires increases as the cross-sectional size decreases, and this increase in effective mass depends on the orientations and substrate faces of nanowires. Among [001], [110], and [111]-oriented rectangular cross-sectional GaAs nanowires, [110]-oriented nanowires with wider width along the [001] direction showed the lightest effective mass. This dependence originates from the anisotropy of the Γ valley of bulk GaAs. The relationship between effective mass and bulk band structure is discussed.
Rights: Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
URI: http://hdl.handle.net/2433/192255
DOI(Published Version): 10.1063/1.4864490
Appears in Collections:Journal Articles

Show full item record

Export to RefWorks


Export Format: 


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.