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dc.contributor.author沖元, 直樹ja
dc.contributor.author岩田, 達哉ja
dc.contributor.author西, 佑介ja
dc.contributor.author木本, 恒暢ja
dc.contributor.alternativeOKIMOTO, Naokien
dc.contributor.alternativeIWATA, Tatsuyaen
dc.contributor.alternativeNISHI, Yusukeen
dc.contributor.alternativeKIMOTO, Tsunenobuen
dc.date.accessioned2015-02-18T06:11:34Z-
dc.date.available2015-02-18T06:11:34Z-
dc.date.issued2012-12-
dc.identifier.issn0913-5685-
dc.identifier.urihttp://hdl.handle.net/2433/193921-
dc.description.abstract上部電極/TiO_2/Pt積層構造において, 上部電極材料が抵抗スイッチング現象に与える影響について調べた. 上部電極としてPt, Ag, Alを用いた場合に, それぞれノンポーラ型, バイポーラ型, 不安定なノンポーラ型の動作を示した. Pt, Ag上部電極をカソードとして用いると類似のRS特性が確認された. このことから, Pt, AgのRSはアノード界面近傍で起こっていること示唆される. Al上部電極をカソードとして用いた場合は, フォーミングオフとなり, 続くRSも不安定であった. これは, Al/TiO_2界面で発生する酸化還元反応が影響していると考える.ja
dc.description.abstractWe have investigated the effects of the top electrode (TE) materials on the resistive switching (RS) characteristics of TE/TiO$_2$/Pt stack structures. TE/TiO2/Pt with Pt, Ag, Al as a TE showed a nonpolar, bipolar, or unstable nonpolar type RS behavior, respectivety. When TE was set as a cathode electrode, Ag-based devices showed similar characteristics to Pt-based ones. It is suggested that RS is induced near the anode. On the other hand, characteristics of Al-based devices differ from others, which the state of the devices aftter forming process showed High Resistance State (HRS) when Al was set as a cathodeelectrode. This result suggest redox reaction at Al/TiO_2 interface.en
dc.format.mimetypeapplication/pdf-
dc.language.isojpn-
dc.publisher一般社団法人 電子情報通信学会ja
dc.publisher.alternativeInstitute of Electronics, Information and Communication Engineers(IEICE)en
dc.rightscopyright ©2012 by IEICEen
dc.subjectReRAMen
dc.subjectTiO_2en
dc.subject電極材料ja
dc.subjectElectrode Materialen
dc.title金属/TiO_2/金属積層構造の抵抗スイッチング特性に対する電極材料の影響ja
dc.title.alternativeEffects of electrode materials on resistive switching characteristics of Metal/TiO_2/Metal stack structuresen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.ncidAN10013254-
dc.identifier.jtitle電子情報通信学会技術研究報告. SDM, シリコン材料・デバイスja
dc.identifier.volume112-
dc.identifier.issue337-
dc.identifier.spage129-
dc.identifier.epage132-
dc.textversionpublisher-
dc.relation.NAID40019546249-
dcterms.accessRightsopen access-
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