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dc.contributor.authorOkumura, Hironorien
dc.contributor.authorKimoto, Tsunenobuen
dc.contributor.authorSuda, Junen
dc.contributor.alternative奥村, 宏典ja
dc.date.accessioned2015-11-09T01:43:38Z-
dc.date.available2015-11-09T01:43:38Z-
dc.date.issued2014-08-18-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/2433/201403-
dc.description.abstractWe grew AlN layers on 6H-SiC (0001) substrates with three Si-C bilayer high (0.75 nm) steps. In the AlN layers, most of the threading dislocations (TDs) were arranged in rows. The TD row consisted of arrays of a half-loop dislocation, which was formed by an AlN/SiC interfacial dislocation along the step edges of the SiC substrate surfaces and a TD pair at both ends. The configuration of the interfacial dislocation was highly relevant with two-dimensional AlN nuclei at the initial stage of growth. We concluded that the half-loop dislocation arrays were generated in the AlN nucleus coalescence over the SiC step edges.en
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherAIP Publishingen
dc.rights© 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en
dc.titleFormation mechanism of threading-dislocation array in AlN layers grown on 6H-SiC (0001) substrates with 3-bilayer-high surface stepsen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.ncidAA00543431-
dc.identifier.jtitleApplied Physics Lettersen
dc.identifier.volume105-
dc.identifier.issue7-
dc.relation.doi10.1063/1.4892807-
dc.textversionpublisher-
dc.identifier.artnum071603-
dcterms.accessRightsopen access-
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