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タイトル: | Near-infrared–to–visible highly selective thermal emitters based on an intrinsic semiconductor |
著者: | Asano, Takashi https://orcid.org/0000-0003-1456-1995 (unconfirmed) Suemitsu, Masahiro Hashimoto, Kohei De Zoysa, Menaka https://orcid.org/0000-0002-1246-2750 (unconfirmed) Shibahara, Tatsuya Tsutsumi, Tatsunori Noda, Susumu https://orcid.org/0000-0003-4302-0549 (unconfirmed) |
著者名の別形: | 浅野, 卓 末光, 真大 野田, 進 |
キーワード: | thermal emission control near-infrared visible energy utilization efficiency thermal emitter intrinsic semiconductor interband transition electronic resonance photonic resonance |
発行日: | 23-Dec-2016 |
出版者: | American Association for the Advancement of Science (AAAS) |
誌名: | Science Advances |
巻: | 2 |
号: | 12 |
論文番号: | e1600499 |
抄録: | Control of the thermal emission spectra of emitters will result in improved energy utilization efficiency in a broad range of fields, including lighting, energy harvesting, and sensing. In particular, it is challenging to realize a highly selective thermal emitter in the near-infrared–to–visible range, in which unwanted thermal emission spectral components at longer wavelengths are significantly suppressed, whereas strong emission in the near-infrared–to–visible range is retained. To achieve this, we propose an emitter based on interband transitions in a nanostructured intrinsic semiconductor. The electron thermal fluctuations are first limited to the higher-frequency side of the spectrum, above the semiconductor bandgap, and are then enhanced by the photonic resonance of the structure. Theoretical calculations indicate that optimized intrinsic Si rod-array emitters with a rod radius of 105 nm can convert 59% of the input power into emission of wavelengths shorter than 1100 nm at 1400 K. It is also theoretically indicated that emitters with a rod radius of 190 nm can convert 84% of the input power into emission of <1800-nm wavelength at 1400 K. Experimentally, we fabricated a Si rod-array emitter that exhibited a high peak emissivity of 0.77 at a wavelength of 790 nm and a very low background emissivity of <0.02 to 0.05 at 1100 to 7000 nm, under operation at 1273 K. Use of a nanostructured intrinsic semiconductor that can withstand high temperatures is promising for the development of highly efficient thermal emitters operating in the near-infrared–to–visible range. |
記述: | 「熱エネルギー」を太陽電池が効率よく発電できる波長の「光」に変換することに初めて成功. 京都大学プレスリリース. 2016-12-27. |
著作権等: | 2016 © The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). |
URI: | http://hdl.handle.net/2433/217701 |
DOI(出版社版): | 10.1126/sciadv.1600499 |
PubMed ID: | 28028532 |
関連リンク: | https://www.kyoto-u.ac.jp/ja/research-news/2016-12-27 |
出現コレクション: | 学術雑誌掲載論文等 |
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