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Title: Electrodeposition of Si Film from Water-Soluble KF-KCl Molten Salt and Feasibility of SiCl₄ as a Si Source
Authors: Yasuda, Kouji
Saeki, Kazumi
Maeda, Kazuma
Nohira, Toshiyuki  kyouindb  KAKEN_id
Homma, Takayuki
Hagiwara, Rika
Author's alias: 安田, 幸司
野平, 俊之
萩原, 理加
Issue Date: 2016
Publisher: The Electrochemical Society
Journal title: ECS Transactions
Volume: 75
Issue: 15
Start page: 593
End page: 601
Abstract: Toward an establishment of a new production method of solar cell substrates, electrodeposition of Si was investigated in molten KF–KCl (eutectic composition, 45:55 mol%) after the introduction of SiCl₄. Gaseous SiCl₄ was directly introduced into the molten salt at 1023 K by a vapor transport method using Ar carrier gas. The dissolution ratio of SiCl₄ exceeded 80% even with the use of a simple tube for the bubbling. Galvanostatic electrolysis was conducted at 923 K on a Ag substrate at 155 mA cm⁻² for 20 min in molten KF–KCl after the dissolution of 2.30 mol% SiCl₄. Although compact Si layer was formed, the smoothness was lower compared to that obtained from the melt after the addition of K₂SiF₆. The anionic molar fraction is probably one of the factors affecting the morphology of deposit.
Description: PRiME 2016/230th ECS Meeting, October 2, 2016 - October 7, 2016, Honolulu, HI.
Rights: © The Electrochemical Society, Inc. 2016. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Trans. 2016 volume 75, issue 15, 593-601.
This is not the published version. Please cite only the published version. この論文は出版社版でありません。引用の際には出版社版をご確認ご利用ください。
DOI(Published Version): 10.1149/07515.0593ecst
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