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dc.contributor.authorNegoro, Yen
dc.contributor.authorKimoto, Ten
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2006-12-25T02:30:07Z-
dc.date.available2006-12-25T02:30:07Z-
dc.date.issued2005-08-15-
dc.identifier.citationY. Negoro et al., J. Appl. Phys. 98, 043709 (2005)-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/2433/24191-
dc.format.extent158923 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherAmerican Institute of Physicsen
dc.rightsCopyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en
dc.titleCarrier compensation near tail region in aluminum- or boron-implanted 4H-SiC(0001)en
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.ncidAA00693547-
dc.identifier.jtitleJournal of Applied Physicsen
dc.identifier.volume98-
dc.identifier.issue4-
dc.relation.doi10.1063/1.2030411-
dc.textversionpublisher-
dc.identifier.artnum043709-
dc.relation.urlhttp://link.aip.org/link/?jap/98/043709-
dcterms.accessRightsopen access-
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